THE RELATIONSHIP BETWEEN THE ANOMALIES OF THE PROPERTIES OF ALLOYS WITH A SEMICONDUCTOR COMPONENT AND SPECIAL FEATURES OF GLASS FORMATION AND STATE DIAGRAMS

The analysis of literature data on the properties of alloys with a semiconductor component shows a significant number of anomalies of physical and mechanical properties left without a comment of the researchers of these alloys. Based on the anomalies in the properties of twelve alloys (Ge-Si, InAs-GaP, GaSb-GaAs, HgTe-CdTe, GaSe-GaS, InSb-AlSb, PbSe-GeTe, Zn-Ge, Ti-Ge, Ge-Tl, ZnTe-HgTe, P-As), the paper attempts to identify a regularity that allows associating these anomalies with state diagrams. For the first time, the authors introduce the concept of phase diagram as a concentration dependence of qualitative changes in crystallization intervals, which allows associating phase diagram with the extremes of physical and mechanical properties of industrially used alloys with a semiconductor component that cannot be explained by the peculiarities of phase composition or structure. The second part of the paper deals with the special aspects of glass formation (amorphization) of multicomponent alloys. Modern literature expresses mutually exclusive judgments about the possibility of using phase equilibrium diagrams to predict the ability to glass-formation, which is well-founded and is probably associated with the absence of a general theory of glass formation. Nevertheless, the analysis of literature data on SiO₂-Na₂O, Ge-S, GeSe-Se, S-Se alloys shows that the glass formation (amorphization) boundaries are associated with phase diagrams. Based on the identified criterion, the paper shows the possibility of using equilibrium state diagrams built for slow-cooled alloys to predict the glass-forming ability of (fast-cooled) alloys.

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